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US 2020/0051850 A1Published application
Airgap formation in beol interconnect structure using sidewall image transfer
AssigneeInternational Business Machines Corporation
InventorsKANGGUO CHENG, EKMINI A. DE SILVA, JUNTAO LI, YI SONG, PENG XU
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Abstract
A method and structure of forming air gaps with a sidewall image transfer process such as self-aligned double patterning to reduce capacitances. Different materials can be provided in the mandrel and non-mandrel regions to enlarge a process window for metal line end formation.
Claims11
A back end of the line (BEOL) interconnect structure comprising:
- a plurality of lines comprising a metal conductor separated by a space having a width of less than 20 nm, wherein the plurality of metal conductor lines are provided on an ultralow k dielectric;
- and
- an oxide provided in the space including an airgap therein.
Dependencies are inferred from the claim text.