Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device in a substrate processing apparatus, comprising:

• forming a film by heating a substrate held on a substrate mounting table by a heater installed in the substrate mounting table and supplying a gas from a shower head installed at a position facing the substrate mounting table to the substrate;
• performing a first temperature measurement by measuring a first temperature of the shower head and storing a measurement value of the first temperature as reference data in a storage part;
• unloading the substrate from the substrate processing apparatus;
• performing a second temperature measurement by measuring a second temperature of the shower head after unloading the substrate and before loading a subsequent substrate, the first temperature being higher than the second temperature;
• calculating a difference between the first temperature and the second temperature;
• determining an adjusted position of the substrate mounting table based on the difference between the first temperature and the second temperature;
• adjusting a distance between the shower head and the substrate mounting table by moving the substrate mounting table to the adjusted position, in a state where the subsequent substrate is not held on the substrate mounting table and the heater is in operation;
• loading the subsequent substrate on the substrate mounting table in the substrate processing apparatus;
• and
• forming a subsequent film by heating the subsequent substrate held on the substrate mounting table by the heater and supplying the gas from the shower head.