Method for Modifying Substrates Based on Crystal Lattice Dislocation Density
AssigneeSiltectra GmbH
InventorsChristian Beyer, Jan Richter, Ralf Rieske, Marko Swoboda, Albrecht Ullrich
Life of this patent
Estimating the term…
Abstract
A method includes: providing a semiconductor body having a generation plane and crystal lattice planes which intersect the generation plane at intersecting lines; generating modifications in the semiconductor body by multiphoton excitation and which are spaced apart from one another, the modifications altering a physical property of the semiconductor body so as to form subcritical cracks in the generation plane; and separating a solid-state layer from the semiconductor body by connecting the subcritical cracks in the generation plane.
Claims25
A method, comprising:
- providing a semiconductor body having a generation plane and crystal lattice planes which intersect the generation plane at intersecting lines;
- generating modifications in the semiconductor body by multiphoton excitation and which are spaced apart from one another, the modifications altering a physical property of the semiconductor body so as to form subcritical cracks in the generation plane;
- and
- separating a solid-state layer from the semiconductor body by connecting the subcritical cracks in the generation plane.
A method, comprising:
- providing a donor substrate having crystal lattice planes which are inclined relative to a planar major surface, the planar major surface forming a boundary of the donor substrate in a longitudinal direction of the donor substrate, with a crystal lattice plane normal being inclined in a first direction relative to a major-surface normal;
- introducing laser radiation into an interior of the donor substrate by way of the major surface, such that a physical property of the donor substrate is altered in a region of at least one laser focus which is formed by laser beams emitted by a laser, the alteration of the physical property forming a structure through alteration of the site of penetration of the laser radiation into the donor substrate, a section of the structure that extends in a straight line being generated parallel to the major surface and extending in a second direction which, relative to the first direction, is inclined at an angle which is other than 90°, the altered physical property causing subcritical cracks to form in the donor substrate;
- and
- removing a solid-state layer from the donor substrate by connecting the subcritical cracks in the donor substrate.
Dependencies are inferred from the claim text.