Semiconductor manufacturing apparatus and method for manufacturing semiconductor device
AssigneeHitachi High-Technologies Corporation
InventorYoshihide Yamaguchi
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Abstract
Provided is a semiconductor manufacturing apparatus including: a container in which a processing chamber is installed; a stage installed in the processing chamber and configured to hold a semiconductor substrate; a gas supply line configured to supply reactive gas to the processing chamber; and a vacuum line configured to exhaust the processing chamber, wherein the semiconductor substrate includes a high-k insulating film, and as the reactive gas, mixed gas including complex-forming gas forming a volatile organometallic complex by reacting with a metal element included in the high-k insulating film and complex stabilizing material gas that increases stability of the organometallic complex is supplied.
Claims9
A semiconductor manufacturing apparatus, comprising:
- a container in which a processing chamber is installed;
- a stage installed in the processing chamber and configured to hold a semiconductor substrate;
- a gas supply line configured to supply reactive gas to the processing chamber;
- and
- a vacuum line configured to exhaust the processing chamber,
- wherein the semiconductor substrate includes a high-k insulating film, and
- as the reactive gas, mixed gas including complex-forming gas forming a volatile organometallic complex by reacting with a metal element included in the high-k insulating film and complex stabilizing material gas that increases stability of the organometallic complex is supplied.
9-15. (canceled)
Dependencies are inferred from the claim text.