Epitaxial silicon wafer and method for manufacturing epitaxial silicon wafer
AssigneeSumco Corporation
InventorsKazuya KODANI, Toshiaki ONO, Kazuhisa TORIGOE
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Abstract
A manufacturing method of an epitaxial silicon wafer includes: an epitaxial-film formation step for forming an epitaxial film made of silicon on a surface of a silicon wafer in a trichlorosilane gas atmosphere; and a nitrogen-concentration setting step for setting the nitrogen concentration of the surface of the epitaxial film through inward diffusion from a nitride film on the epitaxial film, the nitride film being formed by subjecting the silicon wafer provided with the epitaxial film through the epitaxial-film formation step to a heat treatment in a nitrogen atmosphere.
Claims10
An epitaxial silicon wafer comprising:
- a silicon wafer;
- and
- an epitaxial film made of silicon and formed on a surface of the silicon wafer, wherein
- a nitrogen concentration of the surface of the epitaxial film is 5.0×1013 atoms/cm3 or more.
A manufacturing method of an epitaxial silicon wafer, the method comprising
- forming an epitaxial film made of silicon on a surface of a silicon wafer in a trichlorosilane gas atmosphere;
- and
- setting a nitrogen concentration of the surface of the epitaxial film through inward diffusion from a nitride film on the epitaxial film, the nitride film being formed by subjecting the silicon wafer provided with the epitaxial film through the forming of the epitaxial film to a heat treatment in a nitrogen atmosphere.
Dependencies are inferred from the claim text.