US 2020/0051815 A1 · TWO-STEP PROCESS FOR GAPFILLING HIGH ASPECT RATIO TRENCHES WITH AMORPHOUS SILICON FILM

Abstract

Methods for gapfilling semiconductor device features, such as high aspect ratio trenches, with amorphous silicon film are provided. First, a substrate having features formed in a first surface thereof is positioned in a processing chamber. A conformal deposition process is then performed to deposit a conformal silicon liner layer on the sidewalls of the features and the exposed first surface of the substrate between the features. A flowable deposition process is then performed to deposit a flowable silicon layer over the conformal silicon liner layer. A curing process is then performed to increase silicon density of the flowable silicon layer. Methods described herein generally improve overall etch selectivity by the conformal silicon deposition and the flowable silicon deposition two-step process to realize seam-free gapfilling between features with high quality amorphous silicon film.

Claims20

Dependent claims

A semiconductor device, comprising:

a substrate having a substrate surface and at least one feature formed thereon, the at least one feature extending from the substrate surface and having sidewalls and a bottom surface;
a cured conformal silicon liner layer disposed over the substrate surface and the sidewalls and the bottom surface of the at least one feature;
and
a cured flowable silicon film disposed over the cured conformal silicon liner layer, the cured flowable silicon film filling the at least one feature,
wherein the cured conformal silicon liner layer and the cured flowable silicon film each comprises amorphous silicon.

2 more elements

Dependencies are inferred from the claim text.

Two-step process for gapfilling high aspect ratio trenches with amorphous silicon film

Life of this patent

Two-step process for gapfilling high aspect ratio trenches with amorphous silicon film

Life of this patent

Abstract

Claims20