Preventing delamination at silicon/dielectic interface

A method of fabricating a semiconductor device, the method comprising:

• forming a plurality of fins from a substrate, the fins including nFET fins and pFET fins separated from one another;
• forming a silicon nitride (SiN) layer over the nFET fins and the pFET fins;
• forming a liner layer of silicon dioxide (SiO2) over the SiN layer with a non-high density plasma (HDP) process to create an intermediate device;
• and
• depositing with a HDP process a HDP layer of SiO2 over the SiN layer;
• wherein the HDP process includes loading the intermediate device into a deposition chamber and introducing hydrogen (H2) gas and silane (SiH4) into the deposition chamber, wherein the H2 gas is not introduced into the deposition chamber before the SiH4 is introduced into the deposition chamber.

A method of fabricating a semiconductor device, the method comprising:

• forming a plurality of fins from a substrate, the fins including nFET fins and pFET fins;
• forming a trench between the nFET fins and pFET fins, the trench including one or more fins;
• forming a silicon nitride (SiN) layer over the trench, the nFET fins and the pFET fins;
• forming a liner layer of SiO2 over the SiN layer with a non-high density plasma (HDP) process to create an intermediate device;
• and
• depositing with a high density plasma (HDP) process a HDP layer of silicon dioxide (SiO2) over the trench, the nFET fins and the pFET fins;
• wherein the HDP process includes loading the intermediate device into a deposition chamber and introducing hydrogen (H2) gas and silane (SiH4) into the deposition chamber, wherein the H2 gas is not introduced into the deposition chamber before the SiH4 is introduced into the deposition chamber.