Field-effect transistors with a grown silicon-germanium channel

A structure comprising:

• a first field-effect transistor including a first channel region arranged over a buried insulating layer of a silicon-on-insulator substrate and a first gate electrode arranged over the first channel region, the first channel region comprised of a first semiconductor material having a first germanium concentration;
• a second field-effect transistor including a second channel region arranged over the buried insulating layer of the silicon-on-insulator substrate and a second gate electrode arranged over the second channel region, the second channel region comprised of a second semiconductor material having a second germanium concentration that is greater than the first germanium concentration in the first semiconductor material of the first channel region, and
• a third field-effect transistor including a third channel region and a third gate electrode arranged over the third channel region, the third channel region comprised of a section of a device layer of the silicon-on-insulator substrate,
• wherein the third channel region has a first thickness, and the second channel region has a second thickness that is greater than the first thickness of the third channel region.