Physical vapor deposition ( pvd) chamber with reduced arcing
AssigneeApplied Materials, Inc.
InventorsCHAO DU, YONG CAO, CHEN GONG, MINGDONG LI, FUHONG ZHANG, RONGJUN WANG, XIANMIN TANG
Life of this patent
Estimating the term…
Loading patent…
AssigneeApplied Materials, Inc.
InventorsCHAO DU, YONG CAO, CHEN GONG, MINGDONG LI, FUHONG ZHANG, RONGJUN WANG, XIANMIN TANG
Estimating the term…
Embodiments of a process chamber are provided herein. In some embodiments, a process chamber includes a chamber body having an interior volume, a substrate support disposed in the interior volume, a target disposed within the interior volume and opposing the substrate support, a process shield disposed in the interior volume and having an upper portion surrounding the target and a lower portion surrounding the substrate support, the upper portion having an inner diameter that is greater than an outer diameter of the target to define a gap between the process shield and the target, and a gas inlet to provide a gas to the interior volume through the gap or across a front opening of the gap to substantially prevent particles from the interior volume from entering the gap during use.
A process chamber, comprising:
A physical vapor deposition (PVD) process chamber, comprising:
A method of processing a substrate, comprising:
Dependencies are inferred from the claim text.