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AssigneeApplied Materials, Inc.
InventorsANANTHA K. SUBRAMANI, PRABURAM RAJA, STEVEN V. SANSONI, JOHN FORSTER, PHILIP KRAUS, YANG GUO, PRASHANTH KOTHNUR, FARZAD HOUSHMAND, BENCHERKI MEBARKI, JOHN JOSEPH MAZZOCCO, THOMAS BREZOCZKY
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Methods and apparatus for low angle, selective plasma deposition on a substrate. A plasma chamber uses a process chamber having an inner processing volume, a three dimensional (3D) magnetron with a sputtering target with a hollow inner area that overlaps at least a portion of sides of the sputtering target and moves in a linear motion over a length of the sputtering target, a housing surrounding the 3D magnetron and the sputtering target such that at least one side of the housing exposes the hollow inner area of the sputtering target, and a linear channel interposed between the housing and a wall of the process chamber.
A three dimensional (3D) magnetron for plasma deposition on a substrate, comprising:
An apparatus for sputter deposition in a semiconductor chamber, comprising:
An apparatus for plasma deposition, comprising:
Dependencies are inferred from the claim text.