Pressure control ring, plasma processing apparatus including the same and method of manufacturing semiconductor device

A plasma processing apparatus comprising:

• a plasma chamber;
• and
• a pressure control ring being in the plasma chamber and including an exhaust part and a blocking part,
• wherein the exhaust part is configured to induce a flow of gas in the plasma chamber toward a first direction, and
• wherein the blocking part is configured to block the flow of gas in a second direction perpendicular to the first direction.

A plasma processing apparatus comprising:

• a plasma chamber;
• a shower head disposed in an upper space in the plasma chamber, the shower head configured to introduce a process gas into the plasma chamber;
• an electrostatic chuck disposed in a lower space in the plasma chamber, the electrostatic chuck configured to support a substrate;
• and
• a pressure control ring disposed adjacent to the electrostatic chuck,
• wherein the pressure control ring comprises:
• a body surrounding the electrostatic chuck in a plan view,
• an exhaust part in the body, the exhaust part configured to induce a flow of a process gas and reaction by-products in the plasma chamber toward a first direction, the exhaust part including two sub-parts opposite each other;
• and
• a blocking part in the body, the blocking part configured to block the flow of the process gas and the reaction by-products in a second direction perpendicular to the first direction, wherein the blocking part includes two sub-parts opposite each other.