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AssigneeSemes Co., Ltd.
InventorsOgsen GALSTYAN, Young-Bin Kim, Jamyung GU, Jong-Hwan An
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A substrate treating apparatus includes a chamber having a space therein in which a substrate is treated, a support unit that supports the substrate in the chamber, a gas supply unit that supplies gas into the chamber, and a plasma generation unit that excites the gas in the chamber into a plasma state. The plasma generation unit includes a high-frequency power supply, a first antenna connected to one end of the high-frequency power supply, a second antenna connected with the first antenna in parallel, and a current divider that distributes electric current to the first antenna and the second antenna. The current divider includes a first capacitor disposed between the first antenna and the second antenna, a second capacitor connected with the second antenna in parallel, and a third capacitor connected with the second antenna in series. The second capacitor and the third capacitor are implemented with a variable capacitor.
An apparatus for treating a substrate, the apparatus comprising:
An apparatus for generating plasma in a chamber in which a process of treating a substrate is performed, the apparatus comprising:
A method of controlling a plasma generation apparatus, wherein the plasma generation apparatus includes a high-frequency power supply, a first antenna, a second antenna connected with the first antenna in parallel, and a current divider configured to distribute electric current to the first antenna and the second antenna,
Dependencies are inferred from the claim text.