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US 2020/0051743 A1Published application
Microelectronic devices designed with ultra-high-k dielectric capacitors integrated with package substrates
AssigneeIntel Corporation
InventorsThomas L. SOUNART, Aleksandar ALEKSOV, Feras EID, Georgios C. DOGIAMIS, Johanna M. SWAN, Kristof DARMAWIKARTA
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Abstract
Embodiments of the invention include a microelectronic device that includes a plurality of organic dielectric layers and a capacitor formed in-situ with at least one organic dielectric layer of the plurality of organic dielectric layers. The capacitor includes first and second conductive electrodes and an ultra-high-k dielectric layer that is positioned between the first and second conductive electrodes.
Claims21
A microelectronic device comprising:
- a plurality of organic dielectric layers;
- and
- a capacitor formed in-situ with at least one organic dielectric layer of the plurality of organic dielectric layers, and the capacitor includes first and second conductive electrodes and an ultra-high-k dielectric layer that is positioned between the first and second conductive electrodes.
A microelectronic device comprising:
- at least one organic dielectric layer of a package substrate;
- and
- a capacitor that is formed in-situ with the at least one organic dielectric layer of the package substrate, and the capacitor includes first and second conductive electrodes and an ultra-high-k dielectric layer that is positioned between the first and second conductive electrodes.
A method to fabricate a capacitor comprising:
- forming a first capacitor electrode layer in-situ with an organic dielectric layer of a package substrate;
- sputtering a first seed layer on the first capacitor electrode layer;
- and
- sputtering an ultra-high-k dielectric layer on the first seed layer.
1 more element
Dependencies are inferred from the claim text.