Low stray field magnetic memory
AssigneeIntel Corporation
InventorsBrian S. Doyle, Kaan Oguz, Kevin P. O'Brien, David L. Kencke, Charles C. Kuo, Mark L. Doczy, Satyarth Suri, Robert S. Chau
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Abstract
An embodiment includes an apparatus comprising: a substrate; a magnetic tunnel junction (MTJ), on the substrate, comprising a fixed layer, a free layer, and a dielectric layer between the fixed and free layers; and a first synthetic anti-ferromagnetic (SAF) layer, a second SAF layer, and an intermediate layer, which includes a non-magnetic metal, between the first and second SAF layers; wherein the first SAF layer includes a Heusler alloy. Other embodiments are described herein.
Claims25
An apparatus comprising:
- a substrate;
- a magnetic tunnel junction (MTJ), on the substrate, comprising a fixed layer, a free layer, and a dielectric layer between the fixed and free layers;
- and
- a first synthetic anti-ferromagnetic (SAF) layer, a second SAF layer, and an intermediate layer, which includes Ruthenium (Ru), between the first and second SAF layers;
- wherein the first SAF layer includes Manganese (Mn), Gallium (Ga), and Ru.
An apparatus comprising:
- a substrate;
- a magnetic tunnel junction (MTJ), on the substrate, comprising a fixed layer, a free layer, and a dielectric layer between the fixed and free layers;
- and
- a first synthetic anti-ferromagnetic (SAF) layer, a second SAF layer, and an intermediate layer, which includes a non-magnetic metal, between the first and second SAF layers;
- wherein the first SAF layer includes a Heusler alloy.
Dependencies are inferred from the claim text.