Segregation-based memory
AssigneeMicron Technology, Inc.
InventorsMattia Boniardi, Agostino Pirovano, Innocenzo Tortorelli
Life of this patent
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Abstract
Methods, systems, and devices for operating memory cell(s) are described. A resistance of a storage element included in a memory cell may be programmed by applying a voltage to the memory cell that causes ion movement within the storage element, where the storage element remains in a single phase and has different resistivity based on a location of the ions within the storage element. In some cases, multiple of such storage elements may be included in a memory cell, where ions within the storage elements respond differently to electric pulses, and a non-binary logic value may be stored in the memory cell by applying a series of voltages or currents to the memory cell.
Claims25
A method, comprising:
- selecting a memory cell for a write operation, the memory cell comprising a first material having a first resistivity and a second material having a second resistivity;
- applying a first voltage to the memory cell during the write operation, the first material having a third resistivity and the second material having a fourth resistivity after applying the first voltage;
- and
- applying a second voltage to the memory cell during the write operation, the first material having the first resistivity and the second material having the fourth resistivity after applying the second voltage, wherein the first material is in a first phase before the first voltage is applied and after the second voltage is applied and the second material is in a second phase before the first voltage is applied and after the second voltage is applied.
A method, comprising:
- selecting a memory cell for a write operation, the memory cell comprising a first material in a first phase having a first resistivity that corresponds to a first logic value stored by the first material;
- and
- applying a first voltage to the memory cell during the write operation, wherein the first material remains in the first phase and has a second resistivity that corresponds to a second logic value stored by the first material after applying the first voltage.
An apparatus, comprising:
- a memory cell comprising a first material in a first phase and a second material in a second phase, wherein:
- a resistivity of the first material is programmable within the first phase using an amount of current above a first threshold;
- and
- a resistivity of the second material is programmable within the second phase using an amount of current above a second threshold;
- a first access line in electronic communication with the memory cell;
- and
- a second access line in electronic communication with the memory cell.
Dependencies are inferred from the claim text.