Nonvolatile memory device performing program operation and operation method thereof
AssigneeSK hynix Inc.
InventorJin Yong OH
Life of this patent
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Abstract
A nonvolatile memory device includes: a plurality of word lines that are stacked; a vertical channel region suitable for forming a cell string along with the word lines; and a voltage supplier suitable for supplying a plurality of biases required for a program operation on the word lines, where a negative bias is applied to neighboring word lines disposed adjacent to a selected word line at an end of a pulsing section of a program voltage which is applied to the selected word line.
Claims20
A nonvolatile memory device, comprising:
- a plurality of word lines that are stacked;
- a vertical channel region suitable for forming a cell string along with the word lines;
- and
- a voltage supplier suitable for supplying a plurality of biases required for a program operation on the word lines,
- wherein a program voltage is applied to a selected word line, and then a negative bias is applied to neighboring word lines disposed adjacent to the selected word line during an end of a pulsing section of the program voltage which has been applied to the selected word line.
A method for operating a nonvolatile memory device with a plurality of word lines forming a cell string, comprising:
- applying a program voltage to a selected word line and applying a pass voltage to unselected word lines;
- and
- applying a negative bias to neighboring word lines disposed adjacent to the selected word line, among the unselected word lines, during an end of a pulsing section of the program voltage which has been applied to the selected word line.
A nonvolatile memory device, comprising:
- a plurality of word lines forming a cell string;
- and
- a voltage supplier suitable for supplying a plurality of biases required for a program operation on the word lines,
- wherein a program voltage is applied to a selected word line, and then a negative bias is applied to neighboring word lines disposed adjacent to the selected word line during an end of a pulsing section of the program voltage which has been applied to the selected word line.
Dependencies are inferred from the claim text.