Memory architecture having first and second voltages

A method for performing a memory write operation on memory cells in a memory macro,

• the memory cells being arranged in an array, the array including rows corresponding to word lines and columns,
• one or more of the columns being selectively chosen by corresponding selection circuits, and
• when a chosen one of the columns is under the write operation and the remaining columns are not under a write operation,
• the method comprising:
• providing each memory cell with a first reference voltage;
• providing, by a corresponding one of the switching circuits, a first voltage value of a first voltage source or a second voltage value of a second source to all memory cells in the chosen column, each of the first and second voltage values being different than a second reference supply voltage;
• providing, by corresponding remaining ones of the switching circuits, all memory cells in the remaining columns with the other of the first voltage value or the second voltage value;
• and
• providing the word lines with the second voltage value as a voltage value for a high logical value;
• and
• wherein:
• the second voltage value differs from the first voltage value;
• and
• each of the first and second voltage values is different than a second reference supply voltage.

A memory macro comprising:

• word lines;
• memory cells arranged in an array, the array including rows and columns, the rows corresponding to the word lines;
• each memory cell being configured to receive a first reference voltage;
• and
• each column having voltage supply nodes corresponding to corresponding ones of the memory cells in the column;
• switching circuits corresponding to the columns;
• each switching circuit being configured to selectively provide a first voltage value of a first voltage source or a second voltage value of a second voltage source to the voltage supply nodes;
• and
• a word line driver configured to drive the word lines including:
• providing the word lines with the second voltage value as a voltage value for a high logical value of the word lines;
• and
• wherein:
• the first voltage value and the second voltage value differ by a predetermined voltage value;
• activating a selected one or more of the word lines during a write operation, thereby defining an elapse of the write operation;
• and
• each of the first and second voltage values being different than a second reference supply voltage.