Adjustment of a pre-read operation associated with a write operation
AssigneeMicron Technology, Inc.
InventorsZhenlei E. Shen, Zhengang Chen, Tingjun Xie, Jiangli Zhu
Life of this patent
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Abstract
Data can be received at a memory sub-system. A characteristic of the memory sub-system can be identified. A read voltage level can be determined based on the characteristic of the memory sub-system. A read operation can be performed at the memory sub-system based on the read voltage level to retrieve stored data. The received data can be stored at the memory sub-system based on the stored data that was retrieved from the read operation that is based on the read voltage level.
Claims20
A method comprising:
- receiving first data at a memory sub-system;
- identifying a characteristic of the memory sub-system, the characteristic being based on an amount of time that has elapsed since a prior write operation has been performed at the memory sub-system;
- determining, by a processing device, a read voltage level based on the characteristic of the memory sub-system that is based on the amount of time that has elapsed since the prior write operation has been performed at the memory sub-system;
- performing a read operation at the memory sub-system based on the determined read voltage level to retrieve second data;
- and
- storing the first data at the memory sub-system based on the second data retrieved by the read operation that was based on the determined read voltage level.
A system comprising:
- a memory component;
- and
- a processing device, operatively coupled with the memory component, to:
- receive data at a memory sub-system;
- identify a characteristic of the memory sub-system, the characteristic being based on an amount of time that has elapsed since a prior write operation has been performed at the memory sub-system;
- determine a read voltage level based on the characteristic of the memory sub-system that is based on the amount of time that has elapsed since the prior write operation has been performed at the memory sub-system;
- perform a read operation at the memory sub-system based on the read voltage level to retrieve stored data;
- and
- store the received data at the memory sub-system based on the stored data that was retrieved from the read operation that is based on the read voltage level.
A non-transitory computer readable medium comprising instructions, which when executed by a processing device, cause the processing device to perform operations comprising:
- receiving data at a memory sub-system;
- determining whether a condition of the memory sub-system has changed, the condition being based on an amount of time that has elapsed since a prior write operation has been performed at the memory sub-system;
- in response to determining that the condition of the memory sub-system has changed, determining a new read voltage level for the memory sub-system, wherein the new read voltage level is changed from a prior read voltage level used by the memory sub-system;
- and
- applying the new read voltage level to one or more memory cells of the memory sub-system to store the received data.
Dependencies are inferred from the claim text.