Resist Solvents for Photolithography Applications

A method, comprising:

• dispersing a resist layer on a substrate, wherein the resist layer includes a photosensitive unit, a first solvent having a first boiling point, and a second solvent having a second boiling point, the first boiling point being less than the second boiling point;
• after dispersing the resist layer, performing a first heat treatment to the resist layer, wherein the first heat treatment is performed at a first temperature, and wherein the first temperature is greater than the first boiling point but lower than the second boiling point;
• after performing the first heat treatment, exposing the resist layer to extreme ultraviolet (EUV) radiation;
• performing a second heat treatment to the exposed resist layer, wherein the second heat treatment is performed at a second temperature;
• and
• developing the exposed resist layer to form a patterned resist layer.

A method, comprising:

• providing an extreme ultraviolet (EUV) resist solution, wherein the EUV resist solution includes a first solvent and a second solvent, an amount of the first solvent being greater than an amount of the second solvent;
• spin-coating the EUV resist solution over a substrate to form an EUV resist layer, wherein the spin-coating evaporates a portion of the first solvent and a portion of the second solvent such that a remaining amount of the second solvent is greater than a remaining amount of the first solvent;
• performing a pre-exposure bake to the EUV resist layer;
• after performing a pre-exposure bake to the EUV resist layer, exposing the EUV resist layer, resulting in an exposed EUV resist layer;
• performing a post-exposure bake to the exposed EUV resist layer;
• and
• after performing the post-exposure bake, developing the exposed EUV resist layer.