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US 2020/0050109 A1Published application
Priming Material for Organometallic Resist
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun-Chih Ho, An-Ren Zi, Ching-Yu Chang
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Abstract
Semiconductor systems and methods are provided. In an embodiment, a method of film formation includes receiving a substrate, dispensing a priming material on the substrate, and applying an organometallic resist solution over the priming material on the substrate, thereby forming an organometallic resist layer over the priming material. The priming material includes water.
Claims20
A method of film formation, the method comprising:
- receiving a substrate;
- dispensing a priming material on the substrate, wherein the priming material comprises water;
- and
- applying an organometallic resist solution over the priming material on the substrate, thereby forming an organometallic resist layer over the priming material.
1 more element
A method, comprising:
- receiving a substrate;
- applying a priming material on the substrate, wherein the priming material comprises a compound;
- forming an organometallic resist layer on the priming material, wherein the organometallic resist layer comprises an organometallic compound;
- and
- irradiating the organometallic resist layer with an extreme ultraviolet (EUV) source to accelerate a condensation reaction of the compound and the organometallic compound.
2 more elements
A method, comprising:
- receiving a substrate;
- applying a priming material on the substrate in a first ambient humidity;
- forming an organometallic resist layer on the priming material in a second ambient humidity lower than the first ambient humidity, wherein the organometallic resist layer comprises an organometallic compound;
- and
- irradiating the organometallic resist layer with an extreme ultraviolet (EUV) source to accelerate a condensation reaction of the organometallic compound.
2 more elements
Dependencies are inferred from the claim text.