Self-priming resist for generic inorganic hardmasks

A self-priming resist comprising:

• a first random copolymer forming a photoresist;
• and
• a polymer brush having the general formula poly(A-r-B)-C-D, wherein:
• A is a first polymer unit;
• B is a second polymer unit;
• C is a cleavable unit;
• D is a grafting group;
• and
• r indicates that poly(A-r-B) is a second random copolymer formed from the first and second polymer units.

A method for providing an etch on a substrate comprising:

• disposing a self-priming resist on the substrate, the self-priming resist comprising:
• a first random copolymer forming a resist;
• and
• a polymer brush having the general formula poly(A-r-B)-C-D, wherein
• A is a first polymer unit;
• B is a second polymer unit;
• C is a cleavable unit;
• D is a grafting group;
• and
• r indicates that poly(A-r-B) is a second random copolymer formed from the first and second polymer units;
• causing the grafting group to graft to the substrate;
• exposing the self-priming resist and the substrate to an ultraviolet lithography light source to result in an exposed product;
• and
• developing the exposed product to remove the resist and the polymer brush that was exposed.