Method of Modeling a Mask Having Patterns With Arbitrary Angles

A method, comprising:

• receiving a mask layout;
• developing a two-dimensional kernel based on a set of mask layout samples, the developing includes:
• building an orientation map for each mask layout sample, and
• generating the two-dimensional kernel according to the orientation map;
• applying the two-dimensional kernel to the mask layout to obtain a correction field for the mask layout;
• and
• obtaining a final resist image of the mask layout based at least in part on the correction field;
• evaluating the final resist image against a design rule;
• refining the mask layout based on the evaluation;
• and
• fabricating a wafer using a mask with the refined mask layout.

A method, comprising:

• generating a two-dimensional kernel based on a set of processed pre-selected mask layout samples;
• receiving a mask layout, the mask layout containing a non-Manhattan pattern;
• identifying a set of edges of the non-Manhattan pattern and an orientation angle for each edge of the set of edges;
• applying the two-dimensional kernel to each edge having an orientation angle φ to obtain a correction field for the non-Manhattan pattern represented by a modified kernel, wherein the modified kernel includes e−φ;
• obtaining a final resist image of the mask layout based at least in part on the correction field;
• evaluating the final resist image against a design rule;
• refining the mask layout based on the evaluation;
• and
• fabricating a wafer using a mask with the refined mask layout.