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US 2020/0049775 A1Published application
Ultrasensitive magnetic tunneling junction sensor
AssigneeBrown University
InventorsGang XIAO, Guanyang HE
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Abstract
A magnetic tunneling junction sensor includes a free ferromagnetic layer of material, a pinned ferromagnetic layer of material, the free ferromagnetic layer and the pinned ferromagnetic layer separated by a thin insulating layer of material through which electrons can tunnel, an oxidized silicon wafer, the free ferromagnetic layer, thin insulating layer and the pinned ferromagnetic layer deposited on the oxidized silicon wafer, and extrinsic magnetic flux
Claims18
A magnetic tunneling junction sensor comprising:
- a free ferromagnetic layer of material;
- a pinned ferromagnetic layer of material, the free ferromagnetic layer and the pinned ferromagnetic layer separated by a thin insulating layer of material through which electrons can tunnel;
- an oxidized silicon wafer, the free ferromagnetic layer, thin insulating layer and the pinned ferromagnetic layer deposited on the oxidized silicon wafer;
- and
- extrinsic magnetic flux concentrators that amplify external magnetic fields.
2 more elements
A method comprising:
- depositing a bottom ferromagnetic layer on an oxidized silicon wafer using magnetron sputtering;
- depositing an insulating layer on the bottom ferromagnetic layer using magnetron sputtering;
- depositing a top ferromagnetic layer on the insulating layer using magnetron sputtering;
- adding a pattern using photolithography;
- and
- adding a pair of magnetic flux concentrators.
3 more elements
Dependencies are inferred from the claim text.