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US 2020/0049757 A1Published application
Sensor for gate leakage detection
AssigneeQUALCOMM Incorporated
InventorsHyunwoo PARK, Youn Sung CHOI, Stanley Seungchul SONG
Life of this patent
Estimating the term…
Abstract
Aspects generally relate methods and apparatuses of gate leakage detection of a transistor. A gate pad is coupled to a gate of a MOS transistor. A gate leakage detection circuit is coupled to the gate pad, wherein the gate leakage detection circuit is configured to estimate a gate leakage current. Based on the estimated gate leakage current determining a quality of a gate fabrication process.
Claims17
A gate leakage detection apparatus comprising:
- a gate pad coupled to a gate of a MOS transistor;
- a gate leakage detection circuit coupled to the gate pad;
- and
- wherein the gate leakage detection circuit is configured to estimate a gate leakage current and based on the estimated gate leakage current determining a quality of a gate fabrication process.
1 more element
A gate leakage detection apparatus comprising:
- a ring oscillator circuit;
- a decoupling capacitor coupled to the ring oscillator circuit, the decoupling capacitor comprising a plurality of transistors;
- a gate pad coupled to a gate of one of the plurality of capacitors:
- and
- a leakage detection circuit coupled to the gate pad.
2 more elements
A method of detecting a gate leakage comprising:
- monitoring a node coupled to a gate of a transistor;
- measuring an electrical parameter at the node;
- and
- wherein based on the measurement, evaluating a quality of a gate fabrication process.
1 more element
Dependencies are inferred from the claim text.