A single membrane flow-pressure sensing device
AssigneeCambridge Enterprise Limited
InventorsAndrea DE LUCA, Florin UDREA
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Abstract
We disclose herein a CMOS-based sensing device comprising a substrate comprising an etched portion, a first region located on the substrate, wherein the first region comprises a membrane region formed over an area of the etched portion of the substrate, a flow sensor formed within the membrane region and a pressure sensor formed within the membrane region.
Claims38
A CMOS-based sensing device comprising:
- a substrate comprising an etched portion;
- a first region located on the substrate, wherein the first region comprises a membrane region formed over an area of the etched portion of the substrate;
- a flow sensor formed within the membrane region;
- and
- a pressure sensor formed within said membrane region.
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A method of manufacturing a CMOS-based sensing device, the method comprising:
- forming at least one membrane region on a substrate comprising an etched portion, wherein the membrane region is over an area of the etched portion of the substrate;
- forming a flow sensor within the membrane region;
- and
- forming a pressure sensor within said membrane region.
A method according to claim 51, wherein said at least one membrane region is formed by any one of:
- back-etching using Deep Reactive Ion Etching (DRIE) of the substrate, which results in vertical sidewalls;
- and
- using anisotropic etching such as KOH (Potassium Hydroxide) or TMAH (Tetra Methyl Ammonium Hydroxide) which results in slopping sidewalls.
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Dependencies are inferred from the claim text.