Shielding member and apparatus for single crystal growth

A shielding member, which is placed between a SiC source loading portion and a crystal installation portion in an apparatus for single crystal growth, wherein

• the apparatus for single crystal growth includes
• a crystal growth container including
• the SiC source loading portion which accommodates a SiC source in an inner bottom portion, and
• the crystal installation portion facing the SiC source loading portion, and
• a heating unit that is configured to heat the crystal growth container, and wherein
• the apparatus for single crystal growth grows a single crystal of the SiC source on a crystal installed on the crystal installation portion by sublimating the SiC source from the SiC source loading portion,
• the shielding member comprising:
• a plurality of shielding plates, wherein
• each area of the plurality of shielding plates is 40% or less of a base area of the crystal growth container, and wherein,
• in a case where the SiC source loading portion is filled with a SiC source, a shielding ratio provided by a projection surface of the plurality of shielding plates, which is projected on an internal circle of the SiC source loading portion at SiC source surface, is 0.5 or more.