High power impulse magnetron sputtering physical vapor deposition of tungsten films having improved bottom coverage

A method of forming a Tungsten film layer using a high power impulse magnetron sputtering physical vapor deposition process, comprising:

• providing a bias to a substrate in a processing region of a process chamber, the substrate comprising at least one aperture in a surface of the substrate and the processing region of the process chamber having a Tungsten-containing sputter target;
• delivering at least one energy pulse to the sputter target in the processing region of a process chamber to create a sputtering plasma of a sputter gas in the processing region of the process chamber, the at least one energy pulse having an average voltage between about 600 volts and about 1500 volts and an average current between about 50 amps and about 1000 amps at a frequency which is less than 5 kHz and greater than 100 Hz;
• and
• forming an ionized species comprising a Tungsten material sputtered from the Tungsten-containing sputter target, wherein the ionized species forms a Tungsten-containing layer in at least the at least one aperture of the substrate.