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US 2020/0048551 A1Published application
Chemical Mechanical Planarization Composition For Polishing Oxide Materials And Method Of Use Thereof
AssigneeVersum Materials US, LLC
InventorsMing-Shih Tsai, Chia-Chien Lee, Rung-Je Yang, Anu Mallikarjunan, Chris Keh-Yeuan Li, Hongjun Zhou, Joseph D. Rose, Xiaobo Shi
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Abstract
Polishing compositions comprising ceria coated silica particles and organic acids having one selected from the group consisting of sulfonic acid group, phosphonic acid group, pyridine compound, and combinations thereof, with pH between 5 and 10 and electrical conductivity between 0.2 and 10 millisiemens per centimeter provide very high silicon oxide removal rates for advanced semiconductor device manufacturing.
Claims25
A chemical mechanical planarization (CMP) composition for polishing oxide material comprising:
- an abrasive selected from the group consisting of inorganic oxide particles, doped inorganic oxide particles, surface coated composite inorganic oxide particles, organic polymer particles, inorganic oxide coated organic polymer particles, and combinations thereof;
- a removal rate accelerator;
- and
- a solvent;
- wherein the composition further comprises a pH greater than 5.
2 more elements
Dependencies are inferred from the claim text.