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US 2020/0048550 A1Published application
Plasma etching method
AssigneeAjou University Industry-Academic Cooperation Foundation
InventorsChang-Koo KIM, Jun-Hyun KIM, Jin-Su PARK
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Abstract
Provided is a plasma etching method comprising supplying heptafluoropropyl methyl ether (HFE) gas, argon (Ar) gas and oxygen (O2) gas to a plasma chamber receiving an etching target therein, thereby to plasma-etch the etching target.
Claims7
A plasma etching method comprising supplying heptafluoropropyl methyl ether (HFE) gas, argon (Ar) gas, and oxygen (O2) gas to a plasma chamber receiving an etching target therein, thereby to plasma-etch the etching target.
Dependencies are inferred from the claim text.