Glass frit, conductive paste and use of the conductive paste

2:

• The glass frit of claim 1, wherein the first glass frit comprises 40 to 70% by weight of TeO2 and 0.1 to 15% by weight of Bi2O3.

3:

• The glass frit of claim 2, wherein the first glass frit further comprises 0.1 to 15% by weight of SiO2, 0.1 to 15% by weight of ZnO, 0.1 to 15% by weight of WO3 and 0 to 10% by weight of Li2O.

4:

• The glass frit of claim 3, wherein the first glass frit additionally comprises one or more of Cs2O3, MgO, V2O5, ZrO2, Mn2O3, Ag2O, In2O3, SnO2, NiO, Cr2O3, B2O3, Na2O, Al2O3 and CaO, each in an amount in a range of from 0 to 10% by weight.

5:

• The glass frit of claim 1, wherein the second glass frit comprises 40 to 70% by weight of TeO2 and 5 to 30% by weight of PbO.

6:

• The glass frit of claim 5, wherein the second glass frit further comprises 0.1 to 15% by weight of Bi2O3, 0.1 to 15% by weight of SiO2, 0.1 to 10% by weight of ZnO, 0.1 to 10% by weight of WO3 and 0.1 to 10% by weight of Li2O.

7:

• The glass frit of claim 6, wherein the second glass frit additionally comprises one or more of Cs2O3, MgO, V2O5, ZrO2, Mn2O3, Ag2O, In2O3, SnO2, NiO, Cr2O3, B2O3, Na2O, Al2O3 and CaO, each in an amount in a range of from 0 to 10% by weight.

9:

• The conductive paste of claim 8, wherein the electrically conductive metal is selected from the group consisting of carbon, silver, gold, aluminum, platinum, palladium, tin, nickel, cadmium, gallium, indium, copper, zinc, iron, bismuth, cobalt, manganese, molybdenum, chromium, vanadium, titanium, tungsten, alloys thereof and mixtures thereof.

10:

• The conductive paste of claim 8, wherein the organic medium is selected from the group consisting of solvents, binders, surfactants, thixotropic agents, plasticizers, solubilizers, defoamers, desiccants, crosslinkers, complexing agents and/or conductive polymer particles and mixtures thereof.

11:

• The conductive paste of claim 8, wherein the electrically conductive metal is in the form of particles having a mean particle size in a range of from 10 nm to 100 μm.

12:

• A semiconductor substrate, comprising electrically conductive grid lines formed on the semiconductor substrate by the conductive paste of claim 8.