EUTECTIC BONDING WITH ALGe
AssigneeKionix, Inc.
InventorsMartin Heller, Toma Fujita
Life of this patent
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Abstract
A MEMS device formed in a first semiconductor substrate is sealed using a second semiconductor substrate. To achieve this, an Aluminum Germanium structure is formed above the first substrate, and a polysilicon layer is formed above the second substrate. The first substrate is covered with the second substrate so as to cause the polysilicon layer to contact the Aluminum Germanium structure. Thereafter, eutectic bonding is performed between the first and second substrates so as to cause the Aluminum Germanium structure to melt and form an AlGeSi sealant thereby to seal the MEMS device. Optionally, the Germanium Aluminum structure includes, in part, a layer of Germanium overlaying a layer of Aluminum.
Claims29
A method of sealing a MEMS device formed in a first semiconductor substrate using a second semiconductor substrate, the method comprising:
- forming an Aluminum Germanium structure above the first substrate;
- forming a polysilicon layer above the second substrate;
- covering the first substrate with the second substrate so as to cause the polysilicon layer to contact the Aluminum Germanium structure;
- and
- performing eutectic bonding between the first and second substrates so as to cause the Aluminum Germanium structure to melt and form a AlGeSi sealant thereby to seal the MEMS device.
A method of sealing a MEMS device formed in a first semiconductor substrate using a second semiconductor substrate, the method comprising:
- forming a Silicide layer either in or above the first substrate;
- forming an Aluminum Germanium structure above the Silicide layer of the first substrate;
- forming a Silicide layer either in or above a substrate of the second substrate;
- covering the first substrate with the second substrate so as to cause the Aluminum Germanium structure of the first substrate to contact the Silicide layer of the second substrate;
- and
- performing eutectic bonding between the first and second substrates so as to cause the Aluminum Germanium structure to melt and form a AlGeSi sealant thereby to seal the MEMS device.
A method of sealing a MEMS device formed in a first semiconductor substrate using a second semiconductor substrate, the method comprising:
- forming a Silicide layer either in or above the first substrate;
- forming a Silicide layer either in or above the second substrate;
- forming an Aluminum Germanium structure above the Silicide layer of the second substrate;
- covering the first substrate with the second substrate so as to cause the Aluminum Germanium structure of the second substrate to contact the Silicide layer of the first substrate;
- and
- performing eutectic bonding between the first and second substrates so as to cause the Aluminum Germanium structure to melt and form a AlGeSi sealant thereby to seal the MEMS device.
A method of sealing a MEMS device formed in a first semiconductor substrate using a second semiconductor substrate, the method comprising:
- forming a Silicide layer either in or above a substrate of the first substrate;
- forming an Aluminum Germanium structure above the Silicide layer of the first substrate;
- forming a Silicide layer either in or above a substrate of the second substrate;
- forming an Aluminum Germanium structure above the Silicide layer of the second substrate;
- covering the first substrate with the second substrate so as to cause the Aluminum Germanium structure of the first substrate to contact the Aluminum Germanium structure of the first substrate;
- and
- performing eutectic bonding between the first and second substrates so as to cause the Aluminum Germanium structure to melt and form a AlGeSi sealant thereby to seal the MEMS device.
A method of sealing a MEMS device formed in a first semiconductor substrate using a second semiconductor substrate, the method comprising:
- forming a Silicide layer either in or above a substrate of the first substrate;
- forming an Aluminum Germanium structure above the Silicide layer of the first substrate;
- forming a Silicide layer either in or above a substrate of the second substrate;
- forming an Aluminum structure above the Silicide layer of the second substrate;
- covering the first substrate with the second substrate so as to cause the Aluminum Germanium structure of the first substrate to contact the Aluminum structure of the second substrate;
- and
- performing eutectic bonding between the first and second substrates so as to cause the Aluminum Germanium structure to melt and form a AlGeSi sealant thereby to seal the MEMS device.
A method of sealing a MEMS device formed in a first semiconductor substrate using a second semiconductor substrate, the method comprising:
- forming a Silicide layer either in or above a substrate of the first substrate;
- forming a Germanium structure above the Silicide layer of the first substrate;
- forming a Silicide layer either in or above a substrate of the second substrate;
- forming an Aluminum Germanium structure above the Silicide layer of the second substrate;
- covering the first substrate with the second substrate so as to cause the Aluminum Germanium structure of the second substrate to contact the Germanium structure of the first substrate;
- and
- performing eutectic bonding between the first and second substrates so as to cause the Aluminum Germanium structure to melt and form a AlGeSi sealant thereby to seal the MEMS device.
A MEMS structure comprising a first semiconductor substrate and a second semiconductor substrate, said first semiconductor substrate comprising an Aluminum Germanium structure and said second semiconductor substrate comprising a polysilicon layer, said MEMS structure further comprising a MEMS device formed in a cavity of the first semiconductor substrate, the MEMS device being sealed in an AlGeSi sealant, said AlGeSi sealant formed in response to eutectic bonding between the Aluminum Germanium structure formed in the first substrate and the polysilicon layer formed in the second substrate.
A MEMS structure comprising a first semiconductor substrate and a second semiconductor substrate, said first semiconductor substrate comprising an Aluminum Germanium structure and said second semiconductor substrate comprising a Silicide layer, said MEMS structure further comprising a MEMS device formed in a cavity of the first semiconductor substrate, the MEMS device being sealed in an AlGeSi sealant, said AlGeSi sealant formed in response to a eutectic bonding between the Aluminum Germanium structure formed in the first substrate and the Silicide layer formed either in or above the second semiconductor substrate.
A MEMS structure comprising a first semiconductor substrate and a second semiconductor substrate, said first semiconductor substrate comprising a Silicide layer and said second semiconductor substrate comprising an Aluminum Germanium structure, said MEMS structure further comprising a MEMS device formed in a cavity of the first semiconductor substrate, the MEMS device being sealed in an AlGeSi sealant, said AlGeSi sealant formed in response to a eutectic bonding between the Aluminum Germanium structure formed in the second semiconductor substrate and the Silicide layer formed either in or above the first semiconductor substrate.
A MEMS structure comprising a first semiconductor substrate and a second semiconductor substrate, said first semiconductor substrate comprising a first Aluminum Germanium structure and a Silicide layer, said second semiconductor substrate comprising a second Aluminum Germanium structure, said MEMS structure further comprising a MEMS device formed in a cavity of the first semiconductor substrate, the MEMS device being sealed in an AlGeSi sealant, said AlGeSi sealant formed in response to a eutectic bonding between the first Aluminum Germanium structure formed in the first semiconductor substrate, the second Aluminum Germanium structure formed in the second semiconductor substrate and the Silicide layer formed either in or above the first semiconductor substrate.
A MEMS structure comprising a first semiconductor substrate and a second semiconductor substrate, said first semiconductor substrate comprising a first Aluminum Germanium structure, said second semiconductor substrate comprising a second Aluminum Germanium structure and a Silicide layer, said MEMS structure further comprising a MEMS device formed in a cavity of first semiconductor substrate, the MEMS device being sealed in an AlGeSi sealant, said AlGeSi sealant formed in response to a eutectic bonding between the first Aluminum Germanium structure formed in the first semiconductor substrate, the second Aluminum Germanium structure formed in the second semiconductor substrate and the Silicide layer formed either in or above the second semiconductor substrate.
A MEMS structure comprising a first semiconductor substrate and a second semiconductor substrate, said first semiconductor substrate comprising an Aluminum Germanium structure and a Silicide layer, said second semiconductor substrate comprising an Aluminum structure, said MEMS structure further comprising a MEMS device formed in a cavity of a first semiconductor substrate, the MEMS device being sealed in an AlGeSi sealant, said AlGeSi sealant formed in response to a eutectic bonding between the first Aluminum Germanium structure formed in the first semiconductor substrate, the Aluminum structure formed in the second semiconductor substrate, and the Silicide layer formed either in or above the first semiconductor substrate.
A MEMS structure comprising a first semiconductor substrate and a second semiconductor substrate, said first semiconductor substrate comprising an Aluminum Germanium structure, said second semiconductor substrate comprising an Aluminum structure and a Silicide layer, said MEMS structure further comprising a MEMS device formed in a cavity of the first semiconductor substrate, the MEMS device being sealed in an AlGeSi sealant, said AlGeSi sealant formed by a eutectic bonding between the first Aluminum Germanium structure formed in the first semiconductor substrate, the Aluminum structure formed in the second semiconductor substrate, and the Silicide layer formed either in or above the second semiconductor substrate.
Dependencies are inferred from the claim text.