Semiconductor device comprising halopalladate
AssigneeOxford University Innovation Limited
InventorsNobuya Sakai, Amir Abbas Haghighirad, Henry James Snaith
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Abstract
The present invention relates to a semiconductor device comprising a semiconducting material, wherein the semiconducting material comprises a halometallate compound comprising: (a) cesium; (b) palladium; and (c) one or more halide anions [X]. The invention also relates to a layer comprising the semiconducting material. The invention further relates to a process for producing a halometallate compound of formula (IV): [A]2[MIV][X]6, which process uses a H[X] and a compound comprising a sulfoxide group.
Claims32
A semiconductor device comprising a semiconducting material, wherein the semiconducting material comprises a halometallate compound comprising:
- (a) cesium;
- (b) palladium;
- and
- (c) one or more halide anions [X].
A semiconductor device according to any one of the preceding claims, wherein the semiconducting material comprises a halometallate compound of formula (II):
- [A]2[M][X]6 (II),
- wherein:
- [A] comprises Cs+;
- [M] comprises Pd4+;
- [X] comprises the one or more halide anions.
A semiconductor according to any one of the preceding claims, wherein the semiconducting material comprises a halometallate compound selected from the group consisting of Cs2PdBr6, Cs2PdCl6 and Cs2PdI6.
A semiconductor according to any one of the preceding claims, wherein the semiconducting material comprises Cs2PdBr6.
A semiconductor device according to any one of the preceding claims, wherein the semiconductor device is an optoelectronic device.
A semiconductor device according to any one of the preceding claims, which semiconductor device comprises a layer of the semiconducting material.
A semiconductor device according to any one of the preceding claims, which semiconductor device comprises:
- an n-type region comprising at least one n-type layer;
- a p-type region comprising at least one p-type layer;
- and, disposed between the n-type region and the p-type region:
- a layer of the semiconducting material.
A semiconductor device according to any one of the preceding claims, which semiconductor device comprises a layer of the semiconducting material without open porosity.
A semiconductor device according to any one of the preceding claims, wherein the semiconducting material is a photoactive material.
A semiconductor device according to any one of the preceding claims, wherein the semiconducting material has a band gap of from 1.1 to 2.8 eV.
A layer comprising a semiconducting material, wherein the semiconducting material comprises a halometallate compound comprising:
- (a) cesium;
- (b) palladium;
- and
- (c) one or more halide anions [X].
A process for producing a halometallate compound of formula (IV):
- [A]2[MIV][X]6 (IV),
- wherein the process comprises contacting:
- a compound of formula [A][X];
- with
- (ii) a compound of formula [MII][X]2, in the presence of:
- (iii) H[X];
- and
- (iv) a compound comprising a sulfoxide group, wherein:
- [A] comprises one or more monocations;
- [MII] comprises one or more metal dications;
- [MIV] comprises one or more metal tetracations;
- and
- [X] comprises the one or more halide anions.
A process for producing a layer comprising a semiconducting material, wherein the semiconducting material comprises a halometallate compound comprising:
- (a) cesium;
- (b) palladium;
- and
- (c) one or more halide anions [X],
- which process comprises disposing on a substrate a composition comprising the halometallate compound and a solvent.
Dependencies are inferred from the claim text.