Composition For TiN Hard Mask Removal And Etch Residue Cleaning
AssigneeVersum Materials US, LLC
InventorsChao-Hsiang Chen, Yi-Chia Lee, Wen Dar Liu, Chung-Yi Chang
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Abstract
Composition, method and system for TiN hard mask removal from electronic circuitry devices, such as advanced pattern wafers have been disclosed. The cleaning compositions preferably comprise an etchant agent (also referred to as a base), an oxidizing agent, an oxidizing stabilizer (also referred to as a chelating agent), an ammonium salt, a corrosion inhibitor, and a solvent. Other optional additives could be provided. It is preferable that the pH of the cleaning composition be greater than 5.5. The cleaning composition is preferably free from dimethyl sulfoxide and tetramethylammonium hydroxide.
Claims26
A composition for selectively removing at least one of titanium nitride and photoresist etch residue material from the surface of a microelectronic device having same thereon, said composition comprising:
- oxidizing agent;
- solvent;
- etchant agent;
- ammonium salt;
- metal corrosion inhibitor;
- and
- optional fluoride source,
- wherein the composition has a pH ranging from 5.5 to 14.
The ammonium salt may be selected from ammonium citrate tribasic, ammonium acetate, tetraammonium EDTA, ethylenediaminetetraacetic acid diammonium salt, ammonium chloride, ammonium bromide, and combinations thereof.
A cleaning composition for selectively removing at least one of titanium nitride and photoresist etch residue material from the surface of a microelectronic device having same thereon, said cleaning composition comprising
- (a) concentrated composition comprising 0.1-30 wt % etchant agent, 0-5 wt % oxidizing stabilizer/chelator, 100 ppm-8 wt % ammonium salt, 0.1 ppm-5 wt % corrosion inhibitor, 34-99.5 wt % solvent, 0-8 wt % fluoride source and 0-10% weak acid.
- and (b) oxidizing agent combined with the concentrated composition in a weight ratio of 99:1 to 1:99.
A cleaning composition for selectively removing at least one of titanium nitride and photoresist etch residue material from the surface of a microelectronic device having same thereon, said cleaning composition comprising
- (a) concentrated composition comprising 0.1-30 wt % etchant agent, 0-5 wt % oxidizing stabilizer/chelator, 100 ppm-8 wt % ammonium salt, 0.1 ppm-5 wt % corrosion inhibitor, 34-99.5 wt % solvent, 0-8 wt % fluoride source and 0-10% weak acid;
- (b) diluting solvent that is added to the concentrated composition in a weight ratio of 1:100 to 100:1 of the concentrated composition to solvent to make a diluted composition;
- and
- (c) oxidizing agent combined with the diluted composition in a weight ratio of 99:1 to 1:99.
A method comprising:
- preparing a concentrated composition comprising a solvent, an etchant agent, an ammonium salt, a metal corrosion inhibitor and optional oxidizing stabilizer, optional fluoride, and optional weak acid;
- diluting the concentrated composition with water to form a diluted composition;
- and
- mixing the diluted composition with an oxidizing agent to form a cleaning composition;
Dependencies are inferred from the claim text.