Solid-state imaging device, and electronic apparatus

Abstract

The present technology relates to a solid-state imaging device and an electronic apparatus which make it possible to improve the pixel property. Provided is a solid-state imaging device, including a first electrode formed on a semiconductor layer, a photoelectric conversion layer formed on the first electrode, a second electrode formed on the photoelectric conversion layer, and a third electrode disposed between the first electrode and an adjacent first electrode, and electrically insulated. A voltage of the third electrode is controlled to a voltage corresponding to a detection result which can contribute to control of discharge of charges or assist for transfer of charges. The present technology can be applied to, for example, a CMOS image sensor.

Dependencies are inferred from the claim text.