Method for driving a transistor device and electronic circuit
AssigneeInfineon Technologies Austria AG
InventorsStefan H. Groiss, Aliaksandr Subotski
Life of this patent
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Abstract
Disclosed is a method for driving a transistor device and an electronic circuit. The method includes: in an on-state of the transistor device (1), reducing a drive voltage (VGS) of the transistor device (1) from a maximum voltage level (VMAX) to an intermediate voltage level (VINT) that is higher than a threshold voltage level (VTH) of the transistor device (1); maintaining the intermediate voltage level (VINT) for a predefined time period (TINT); and reducing the drive voltage (VGS) to below the threshold voltage level (VTH) after the predefined time period (TINT) to switch the transistor device to an off-state.
Claims20
A method comprising:
- during an on-state of a transistor device, reducing a gate drive voltage of the transistor device from a maximum voltage level to an intermediate voltage level that is higher than a threshold voltage level of the transistor device;
- setting the gate drive voltage to the intermediate voltage level for a predefined time period;
- and
- reducing a magnitude of the gate drive voltage to below the threshold voltage level after the predefined time period to switch the transistor device to an off-state.
An electronic circuit comprising:
- a drive circuit;
- wherein the drive circuit is operable to:
- during an on-state of a transistor device, reduce a gate drive voltage of the transistor device from a maximum voltage level to an intermediate voltage level that is higher than a threshold voltage level of the transistor device;
- set the gate drive voltage to the intermediate voltage for a predefined time period;
- and
- reduce the drive voltage to below the threshold voltage after the predefined time period to switch the transistor device to an off-state.
Dependencies are inferred from the claim text.