Support Structure for Bulk Acoustic Wave Resonator
AssigneeGlobal Communication Semiconductors, LLC
InventorsLiping D. Hou, Kun-Mao Pan, Shing-Kuo Wang
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AssigneeGlobal Communication Semiconductors, LLC
InventorsLiping D. Hou, Kun-Mao Pan, Shing-Kuo Wang
Estimating the term…
Devices and processes for preparing devices are described for a bulk acoustic wave resonator. A stack includes a first electrode that is coupled to a first side of a piezoelectric layer and a second electrode that is coupled to a second side of the piezoelectric layer. The stack is configured to resonate in response to an electrical signal applied between the first electrode and the second electrode. A cavity frame is coupled to the first electrode and to the substrate. The cavity frame forms a perimeter around a cavity. Optionally, a heat dissipating frame is formed and coupled to the second electrode. The cavity frame and/or the heat dissipating frame improve the thermal stability of the bulk acoustic resonator.
A bulk acoustic resonator, comprising:
A bulk acoustic resonator prepared by a process comprising the steps of:
Dependencies are inferred from the claim text.