Vertical cavity surface emitting laser

A vertical cavity surface emitting laser comprising:

• an active layer having a quantum well structure including a well layer and a barrier layer,
• a first laminate for a first distributed Bragg reflector;
• and
• a first spacer region provided between the active layer and the first laminate, wherein
• the barrier layer includes a first compound semiconductor containing aluminum as a group m constituent element,
• the first spacer region includes a second compound semiconductor having a larger aluminum composition than the first compound semiconductor,
• the first spacer region includes a first portion and a second portion,
• the first laminate, the first portion of the first spacer region, the second portion of the first spacer region, and the active layer are arranged along a direction of a first axis,
• the first portion of the first spacer region and the first laminate contain first dopant,
• the first portion of the first spacer region is provided from the first laminate to the second portion of the first spacer region,
• the second portion of the first spacer region is provided from the active layer to the first portion of the first spacer region,
• a concentration of the first dopant in the first laminate is larger than a concentration of the first dopant in the first portion of the first spacer region, and
• the concentration of the first dopant in the first portion of the first spacer region is larger than a concentration of the first dopant in the second portion of the first spacer region.