Quantum-dot photonics
AssigneeHewlett Packard Enterprise Development LP
InventorsGeza Kurczveil, Di Liang, Raymond C. Beausoleil
Life of this patent
Estimating the term…
Abstract
Examples disclosed herein relate to quantum-dot (QD) photonics. In accordance with some of the examples disclosed herein, a QD semiconductor optical amplifier (SOA) may include a silicon substrate and a QD layer above the silicon substrate. The QD layer may include an active gain region to amplify a lasing mode received from an optical signal generator. The QD layer may have a gain recovery time such that the active gain region amplifies the received lasing mode without pattern effects. A waveguide may be included in an upper silicon layer of the silicon substrate. The waveguide may include a mode converter to facilitate optical coupling of the received lasing mode between the QD layer and the waveguide.
Claims20
A quantum-dot (QD) semiconductor optical amplifier (SOA), comprising:
- a silicon substrate;
- a QD layer above the silicon substrate, the QD layer including an active gain region to amplify a lasing mode received from an optical signal generator, the QD layer having a gain recovery time such that the active gain region amplifies the received lasing mode without pattern effects;
- a waveguide included in an upper silicon layer of the silicon substrate;
- and
- a mode converter included in the waveguide to facilitate optical coupling of the received lasing mode between the QD layer and the waveguide.
A quantum-dot (QD) semiconductor optical amplifier (SOA), comprising:
- a silicon substrate;
- a QD layer above the silicon substrate, the QD layer including a first QD SOA region and a second QD SOA region, the first QD SOA region to amplify a lasing mode received from an optical signal generator and the second QD SOA region to reduce noise amplitude of the lasing mode, the QD layer having a gain recovery time such that the first QD SOA region amplifies the lasing mode without pattern effects;
- a waveguide included in an upper silicon layer of the silicon substrate;
- a mode converter included in the waveguide to facilitate optical coupling of the lasing mode between the QD layer and the waveguide;
- first and second electrodes above the QD layer, the first electrode to inject electrical carriers into the first QD SOA region and the second electrode to inject electrical carriers into the second QD SOA region;
- and
- an isolating region electrically isolating the first and second electrodes.
A quantum dot (QD) photodetector, comprising:
- a silicon substrate;
- a waveguide included in an upper silicon layer of the silicon substrate;
- a mode converter included in the waveguide to facilitate optical coupling of an optical signal between the waveguide and a QD layer;
- and
- the QD layer above the waveguide, the QD layer including an absorption region to absorb photons from the coupled optical signal and generate a photocurrent from the absorbed photons.
Dependencies are inferred from the claim text.