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US 2020/0028317 A1Published application
Semiconductor device and fabrication method
AssigneeUCL Business PLC
InventorsSiming CHEN, Mengya LIAO, Suguo HUO, Mingchu TANG, Jiang WU, Alwyn SEEDS, Huiyun LIU
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Abstract
Disclosed herein is a semiconductor device comprising: a silicon substrate; a germanium layer; and a buffer layer comprised of at least one layer of III-V compound, formed directly on silicon; at least one layer containing III-V compound quantum dots wherein one or more facets are formed using focused ion beam etching such that the angle between the plane of the facet is normal to the plane of growth.
Claims13
A semiconductor device comprising:
- a silicon substrate;
- a germanium layer;
- and
- a buffer layer comprised of at least one layer of III-V compound, formed directly on silicon;
- at least one layer containing III-V compound quantum dots
- wherein one or more facets are formed using focused ion beam etching such that the angle between the plane of the facet is normal to the plane of growth.
3 more elements
A semiconductor device comprising:
- a silicon substrate;
- a buffer layer comprised of at least one layer of III-V compound, formed directly on silicon;
- one or more strained layer superlattices;
- at least one layer containing III-V compound quantum dots;
- wherein one or more facets are formed using focused ion beam etching such that the angle between the plane of the facet is normal to the plane of growth.
2 more elements
Dependencies are inferred from the claim text.