Method of encapsulating a flexible oled panel and encapsulation structure

An encapsulation structure of a flexible OLED panel, comprising:

• a TFT substrate;
• an OLED device, disposed on the TFT substrate;
• a first inorganic barrier layer, disposed on the TFT substrate and covering the OLED device;
• a liquid metal layer, disposed on the first inorganic barrier layer;
• a liquid metal oxide layer, covering a surface of the liquid metal layer;
• an organic buffer layer, disposed on the first inorganic barrier layer and covering the liquid metal oxide layer;
• and
• a second inorganic barrier layer, disposed on the first inorganic barrier layer and covering the organic buffer layer.

A method of encapsulating a flexible OLED panel, comprising the following steps:

• step S1:
• providing a TFT substrate, and manufacturing an OLED device on the TFT substrate;
• step S2:
• forming a first inorganic barrier layer covering the OLED device on the TFT substrate;
• step S3:
• forming a liquid metal layer on the first inorganic barrier layer,
• step S4:
• using oxygen to oxidize the liquid metal layer, and forming a liquid metal oxide layer on a surface of the liquid metal layer;
• step S5:
• forming an organic buffer layer covering the liquid metal oxide layer on the first inorganic barrier layer;
• and
• step S6:
• forming a second inorganic barrier layer covering the organic buffer layer on the first inorganic barrier layer;
• wherein the TFT substrate includes a flexible TFT substrate;
• wherein a material of the liquid metal layer includes a binary eutectic alloy consisted of indium and gallium;
• wherein a mass ratio of indium to gallium of the binary eutectic alloy is 1:3;
• and
• wherein the first inorganic barrier layer is formed via plasma enhanced chemical vapor deposition in the step S2, the liquid metal layer is formed via ink jet printing in a nitrogen environment in the step S3, the organic buffer layer is formed via ink jet printing in the step S5 and further comprises a step of curing the organic buffer layer after the step S5, the second inorganic barrier layer is formed via plasma enhanced chemical vapor deposition in the step S6, an area covered by the second inorganic barrier layer is the same as an area covered by the first inorganic barrier layer, and the first inorganic barrier layer and the second inorganic barrier layer include silicon nitride, silicon oxide, or silicon oxynitride.