Confined phase change memory with double air gap
AssigneeInternational Business Machines Corporation
InventorsInjo Ok, Balasubramanian Pranatharthiharan, Wei Wang
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Abstract
A method is presented for reducing heat loss to adjacent semiconductor structures. The method includes forming a plurality of conductive lines within an interlayer dielectric, forming a barrier layer over at least one conductive line of the plurality of conductive lines, forming a via extending to a top surface of the barrier layer, and defining dual air gaps within the via and over the barrier layer.
Claims20
A method for reducing heat loss to adjacent semiconductor structures, the method comprising:
- forming a via extending through a dielectric layer;
- and
- defining dual air gaps within the via.
A method for reducing heat loss to adjacent semiconductor structures, the method comprising:
- forming a via;
- defining a first air gap between Ge—Sb—Te (germanium-antimony-tellurium or GST) alloy layers;
- and
- defining second air gaps on opposed ends of the first air gap.
A semiconductor structure for reducing heat loss to adjacent semiconductor devices, the semiconductor structure comprising:
- a plurality of conductive lines;
- a first air gap defined within a dielectric disposed over the plurality of conductive lines;
- and
- second air gaps defined on opposed ends of the first air gap.
Dependencies are inferred from the claim text.