Method for forming a phase change memory (pcm) cell with a low deviation contact area between a heater and a phase change element

An integrated circuit (IC) comprising:

• a first bottom electrode;
• a dielectric layer overlying the first bottom electrode;
• a first phase change structure overlying a top surface of the dielectric layer, wherein a width of the first phase change structure decreases continuously from a first width value at the top surface of the dielectric layer to a second width value below the top surface;
• and
• a first heater in the dielectric layer and extending from the first phase change structure to the first bottom electrode, wherein a width of the first heater is substantially equal to the second width value at the first phase change structure.

A method for manufacturing a phase change memory (PCM) structure, the method comprising:

• depositing a dielectric layer covering a first electrode;
• patterning the dielectric layer to form a first opening in the dielectric layer and exposing the first electrode;
• forming a first heater in the first opening;
• after the forming of the first heater, recessing a top surface of the first heater relative to a top surface of the dielectric layer;
• and
• forming a phase change element overlying the top surface of the dielectric layer and protruding into the dielectric layer to the top surface of the first heater.