Co-Fired Passive Integrated Circuit Devices
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsAlexander Kalnitsky, Shawn Searles, David Cappabianca
Life of this patent
Estimating the term…
Loading patent…
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsAlexander Kalnitsky, Shawn Searles, David Cappabianca
Estimating the term…
Co-fired integrated circuit devices and methods for fabricating and integrating such on a workpiece are disclosed herein. An exemplary method includes forming a first passive device and a second passive device over a carrier substrate. The first passive device and the second passive device each include at least one material layer that includes a co-fired ceramic material. The carrier substrate is removed after performing a co-firing process to cause chemical changes in the co-fired ceramic material. The first passive device may include a conductive loop disposed between a first magnetic layer and a second magnetic layer. The first magnetic layer, the second magnetic layer, or both includes a co-fired ceramic magnetic material. The second passive device may include a first conductive layer and a second conductive layer separated by a dielectric layer. The first conductive layer, the second conductive layer, or both includes a co-fired ceramic conductive material.
A device comprising:
A device comprising:
A device comprising:
Dependencies are inferred from the claim text.