Dual function magnetic tunnel junction pillar encapsulation
AssigneeInternational Business Machines Corporation
InventorsSon V. Nguyen, Alexander Reznicek, Donald F. Canaperi
Life of this patent
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Abstract
Magnetic tunnel junction pillars are encapsulated by an oxidized diffusion barrier layer. Oxygen within the encapsulating material is used to oxidize metallic residue outside the pillars, converting the residue to a non-conductive material such as a metal oxide or metal oxynitride. Selective deposition of manganese on the metal layers of the pillars can be followed by oxidation of the manganese to form a manganese oxide diffusion barrier. Alternatively, manganese deposition can be followed by deposition of silicon dioxide and subsequent annealing to form a manganese silicate diffusion barrier.
Claims23
A method of forming a diffusion barrier on a pillar including a magnetic tunnel junction, comprising:
- obtaining a pillar having sidewalls and including a magnetic tunnel junction and metallic residue on the sidewalls;
- selectively depositing a metal layer on the sidewalls of the pillar and over the metallic residue;
- forming an oxidized diffusion barrier layer on the sidewalls of the pillar from the metal layer, and
- causing oxidation of the metallic residue using oxygen within the oxidized diffusion barrier layer.
(canceled)
(canceled)
A method of forming a pillar including a magnetic tunnel junction and a diffusion barrier layer on the pillar, comprising:
- providing a blanket structure including metal layers and a tunnel barrier layer over a wiring layer;
- subjecting the blanket structure to ion beam etching to obtain a pillar extending vertically from the wiring layer, the pillar including a magnetic tunnel junction, vertically extending sidewalls and metallic residue on the sidewalls;
- forming a diffusion barrier layer on the sidewalls of the pillar by depositing a metal compound including oxygen on the pillar and over the metallic residue, and
- oxidizing the metallic residue using the oxygen within the metal compound.
An electronic structure comprising:
- a wiring layer;
- a pillar extending vertically from the wiring layer, the pillar having sidewalls and including:
- a vertical stack of metal layers, and
- a magnetic tunnel junction comprising a plurality of the metal layers and a tunnel barrier layer;
- a diffusion barrier layer on the sidewalls of the pillar, the diffusion barrier being comprised of a compound including manganese and oxygen, and
- a metal oxide or metal oxynitride residue adjoining the sidewalls of the pillar and encapsulated by the diffusion barrier layer.
(canceled)
Dependencies are inferred from the claim text.