Back to results
US 2020/0028067 A1Published application
Device with capping layer for improved residue defect and method of production thereof
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorsYi JIANG, Curtis Chun-I HSIEH, Wanbing YI, Juan Boon TAN
Life of this patent
Estimating the term…
Abstract
A device including a capping layer over a portion of a top electrode, and method of production thereof. Embodiments include an MRAM cell in a first region and a logic area in a second region of a substrate, wherein the MRAM cell includes a MTJ pillar between a top electrode and a bottom electrode; and a capping layer over a portion of the top electrode.
Claims20
A device comprising:
- a magnetic random access memory (MRAM) cell in a first region and a logic area in a second region of a substrate, wherein the MRAM cell comprises a magnetic tunnel junction (MTJ) pillar between a top electrode and a bottom electrode;
- a capping layer over a portion of the top electrode;
- and
- a silicon nitride (SiN) liner on upper and side surfaces of the bottom electrode.
1 more element
(canceled)
A method comprising:
- forming a magnetic random access memory (MRAM) cell in a first region and a logic area in a second region of a substrate, wherein the MRAM cell comprises a magnetic tunnel junction (MTJ) pillar between a top electrode and a bottom electrode;
- forming a capping layer over a portion of the top electrode;
- and
- forming a silicon nitride (SiN) liner on upper and side surfaces of the bottom electrode.
1 more element
A device comprising:
- a magnetic random access memory (MRAM) cell in a first region and a logic area in a second region of a substrate, wherein the MRAM cell comprises a magnetic tunnel junction (MTJ) pillar between a top electrode and a bottom electrode;
- a capping layer comprising silicon nitride (SiN) and formed to a thickness of 30 nanometer (nm) to 50 nm over a portion of the top electrode;
- and
- a silicon nitride (SiN) liner on upper and side surfaces of the bottom electrode.
1 more element
Dependencies are inferred from the claim text.