US 2020/0028030 A1Published application

Light emitting device and manufacturing method thereof

AssigneeAu Optronics Corporation

InventorsYi-Fen Lan, Chin-Yuan Ho, Tsung-Tien Wu

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Abstract

A light emitting device includes a substrate, an adhesion layer, a micro light emitting device (μLED), a first conductive layer, and a second conductive layer. A light emitting surface of the μLED is away from the substrate. The μLED includes a first semiconductive layer, a second semiconductive layer, a tether layer, a first electrode, and a second electrode. The tether layer covers a portion of sidewalls of the first semi-conductive layer, a portion of a bottom surface of the first semi-conductive layer, sidewalls of the second semiconductive layer, and a portion of a bottom surface of the second semiconductive layer. The first electrode and the second electrode are respectively electrically connected to the first semiconductive layer and the second semiconductive layer. The first conductive layer and the second conductive layer are respectively electrically connected to the first electrode and the second electrode.

Claims20

Dependent claims

A light emitting device, comprising:

a substrate;
an adhesive layer, located on the substrate, wherein a lower surface of the adhesive layer faces the substrate and an upper surface of the adhesive layer faces away the substrate;
a micro light emitting device, located in a recess of the adhesive layer, wherein a light emitting surface of the micro light emitting device is away from the substrate, and the micro light emitting device comprises:
a first semiconductor layer;
a second semiconductor layer, overlapping the first semiconductor layer, wherein a vertical projection area of the first semiconductor layer is larger than a vertical projection area of the second semiconductor layer, and the second semiconductor layer is closer to the substrate than the first semiconductor layer;
a tether layer, covering a portion of the side surface of the first semiconductor layer, a portion of the lower surface of the first semiconductor layer, the side surface of the second semiconductor layer, and a portion of the lower surface of the second semiconductor layer, wherein the tether layer has a first through hole and a second through hole, the first through hole corresponds to the portion of the lower surface of the first semiconductor layer, and the second through hole corresponds to the portion of the lower surface of the second semiconductor layer;
a first electrode, located on the tether layer, and electrically connected to the first semiconductor layer through the first through hole;
and
a second electrode, located on the tether layer, and electrically connected to the second semiconductor layer through the second through hole;
a first conductive layer, located on the substrate, and electrically connected to the first electrode;
and
a second conductive layer, located on the substrate, and electrically connected to the second electrode.

9 more elements

A method of manufacturing a light emitting device, comprises:

forming a micro light emitting device on a growth substrate, wherein the micro light emitting device, comprises:
a first semiconductor layer and a second semiconductor layer;
a tether layer, disposed on the first semiconductor layer and the second semiconductor layer, and the tether layer has a first extension portion, a second extension portion, and at least one tether extending along a predetermined direction;
and
a first electrode and a second electrode, disposed on the first extension portion and the second extension portion respectively, wherein the first electrode and the second electrode electrically connected to the first semiconductor layer and the second semiconductor layer respectively;
forming a first sacrificial layer on the micro light emitting device;
forming a second sacrificial layer on the micro light emitting device, wherein the tether is connected to a sacrificial portion, and the sacrificial portion contacts the second sacrificial layer;
providing an interposer substrate on the second sacrificial layer to form an interposer structure, inverting the interposer structure, and removing the growth substrate;
removing the first sacrificial layer;
forming an adhesive layer on a substrate;
using a transferring device to contact the first semiconductor layer of the micro light emitting device, and transferring the micro light emitting device to the adhesive layer;
and
forming a first conductive layer and a second conductive layer on the substrate, the first conductive layer and the second conductive layer are electrically connected to the first electrode and the second electrode respectively.

10 more elements

Dependencies are inferred from the claim text.

Facts

Application: 16/151,349Filed 4 Oct 2018
Priority: TW 10712468417 Jul 2018
Published: 23 Jan 2020
Term ends: Not estimatedThe source records don’t support an estimate.

Classification10 codes

H10H 20/83
Constructional details: electrodes
H10W 90/00
Package configurations
H10H 20/01
Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]: manufacture or treatment
H10H 20/813
Bodies: having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within…