Manufacturing method of quantum dot structure
AssigneeSuzhou Institute of Nano-Tech and Nano-Bionics (Sinano) , Chinese Academy of Sciences
InventorsZiyang ZHANG, Rong HUANG, Yuanqing HUANG
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Abstract
The present disclosure discloses a manufacturing method of a quantum dot structure including: providing a quantum dot film layer on a substrate; providing a first protection film on the quantum dot film layer; providing a patterned array on the first protection film; providing a second protection film on the first protection film and the patterned array to obtain an intermediate body; and performing an annealing process on the intermediate body to obtain the quantum dot structure on the substrate.
Claims12
A manufacturing method of a quantum dot structure, comprising:
- providing a quantum dot film layer on a substrate;
- providing a first protection film on the quantum dot film layer;
- providing a patterned array on the first protection film;
- providing a second protection film on the first protection film and the patterned array to obtain an intermediate body;
- and
- performing an annealing process on the intermediate body to obtain the quantum dot structure on the substrate.
Dependencies are inferred from the claim text.