Method of producing a semiconductor laser and semiconductor laser
AssigneeOSRAM Opto Semiconductors GmbH
InventorsAlfred Lell, Georg Brüderl, John Brückner, Sven Gerhard, Muhammad All, Thomas Adlhoch
Life of this patent
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Abstract
A method of manufacturing a semiconductor laser including providing a substrate having a semiconductor layer sequence with an active layer that generates light during operation of the semiconductor laser, applying a continuous contact layer having at least one first partial region and at least one second partial region on a bottom side of the substrate opposite the semiconductor layer sequence, and locally annealing the contact layer only in the at least one first partial region.
Claims17
-15. (canceled)
A method of manufacturing a semiconductor laser comprising:
- providing a substrate having a semiconductor layer sequence with an active layer that generates light during operation of the semiconductor laser,
- applying a continuous contact layer having at least one first partial region and at least one second partial region on a bottom side of the substrate opposite the semiconductor layer sequence, and
- locally annealing the contact layer only in the at least one first partial region.
A semiconductor laser comprising:
- a substrate having a semiconductor layer sequence with an active layer that generates light during operation of the semiconductor laser, and
- a contact layer on a bottom side of the substrate opposite the semiconductor layer sequence,
- wherein the contact layer has at least one first partial region and at least one second partial region which are formed contiguously, and
- the at least one first partial region is annealed and the at least one second partial region is unannealed.
A method of manufacturing a semiconductor laser comprising:
- providing a substrate having a semiconductor layer sequence with an active layer that generates light during operation of the semiconductor laser,
- applying a continuous contact layer having at least one first partial region and at least one second partial region on a bottom side of the substrate opposite the semiconductor layer sequence, and
- locally annealing the contact layer only in the at least one first partial region, wherein each second partial region remains unannealed in the finished semiconductor laser.
Dependencies are inferred from the claim text.