US 2020/0028020 A1Published application

Infrared detecting device

AssigneeAsahi Kasei Microdevices Corporation

InventorsYoshiki SAKURAI, Osamu MOROHARA, Hiromi FUJITA

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Abstract

Provided is an infrared detecting device with high SNR. The infrared detecting device includes: a semiconductor substrate; a first compound semiconductor layer; a light receiving layer formed on the first compound semiconductor layer and containing at least In and Sb and having a predetermined range(s) of Al or Al and Ga proportion(s); a third compound semiconductor layer; and a second compound semiconductor layer containing at least In, Al, and Sb and having a predetermined range(s) of Al or Al and Ga proportion(s), in which the first compound semiconductor layer includes, in the stated order, a first A layer, a first B layer, and a first C layer, each containing at least In and Sb and having a predetermined range(s) of Al or Al and Ga proportion(s), and the proportion(s) of the Al composition or the Al composition and the Ga composition of each layer satisfy a predetermined relation(s).

Claims20

Dependent claims

An infrared detecting device comprising:

a semiconductor substrate;
a first compound semiconductor layer formed on the semiconductor substrate and having a first conductivity type;
a light receiving layer formed on the first compound semiconductor layer and containing at least In and Sb, where the light receiving layer has an Al composition at a proportion of nlight [%] in all group III elements in the light receiving layer where 0≤nlight<18;
a third compound semiconductor layer formed on the light receiving layer and having a second conductivity type;
and
a second compound semiconductor layer formed in at least one of regions between the light receiving layer and the third compound semiconductor layer or between the first compound semiconductor layer and the light receiving layer, containing at least In, Al, and Sb, having an Al composition at a proportion of n2 [%] in all group III elements in the second compound semiconductor layer where 0<n2<100, and having a film thickness of m2 [nm] where m2>2, wherein the first compound semiconductor layer comprises, in the stated order:
a first A layer containing at least In and Sb and having an Al
composition at a proportion of n1A [%] in all group III elements in the first A layer where 0≤n1A<18;
a first B layer containing at least In and Sb, having an Al composition at a proportion of n1B [%] in all group III elements in the first B layer where 0≤n1B<100, and having a film thickness of m1B [nm];
and
a first C layer containing at least In and Sb and having an Al composition at a proportion of n1C [%] in all group III elements in the first C layer where 0≤n1C<18,
where n1A, n1B, n1C, n2, nlight, m1B, and m2 satisfy the following relations:
|n2−nlight|×m2≤|n1B−n1A|×m1B;
n1B>n1A and n1B>n1C, or n1B<n1A and n1B<n1C;
and
n2>nlight+5.

13 more elements

An infrared detecting device comprising:

a semiconductor substrate;
a first compound semiconductor layer formed on the semiconductor substrate and having a first conductivity type;
a light receiving layer formed on the first compound semiconductor layer, containing at least In and Sb, and having an Al composition at a proportion of nAl light [%] in all group III elements in the light receiving layer and a Ga composition at a proportion of nGa light [%] in all group III elements in the light receiving layer, where a sum of the proportions nAl light and nGa light satisfies a relation of 0<nAl light+nGa light<18;
a third compound semiconductor layer formed on the light receiving layer and having a second conductivity type;
and
a second compound semiconductor layer formed in at least one of regions between the light receiving layer and the third compound semiconductor layer or between the first compound semiconductor layer and the light receiving layer, containing at least In, Al, and Sb, having an Al composition at a proportion of nAl2 [%] in all group III elements in the second compound semiconductor layer where 0≤nAl2<100 and a Ga composition at a proportion of nGa2 [%] in all group III elements in the second compound semiconductor layer where 0≤nGa2<100, and having a film thickness of m2 [nm] where m2>2,
wherein the first compound semiconductor layer comprises, in the stated order:
a first A layer containing at least In and Sb and having an Al composition at a proportion of nAl1A [%] in all group III elements in the first A layer and a Ga composition at a proportion of nGa1A [%] in all group III elements in the first A layer, where a sum of the proportions nAl1A and nGa1A satisfies a relation of 0<nAl1A+nGa1A<18;
a first B layer containing at least In and Sb, having an Al composition at a proportion of nAl1B [%] in all group III elements in the first B layer and a Ga composition at a proportion of nGa1B [%] in all group III elements in the first B layer, where a sum of the proportions nAl1B and nGa1B satisfies a relation of 0<nAl1B+nGa1B<100, and having a film thickness of m1B [nm];
and
a first C layer containing at least In and Sb and having an Al composition at a proportion of nAl1C [%] in all group III elements in the first C layer and a Ga composition at a proportion of nGa1C [%] in all group III elements in the first C layer, where a sum of the proportions nAl1C and nGa1C satisfies a relation of 0<nAl1C+nGa1C<18,
where nAl1A, nGa1A, nAl1B, nGa1B, nAl1C, nGa1C, nAl2, nGa2, nAl light, nGa light, m1B, and m2 satisfy the following relations:
|nAl2+nGa2−(nAl light+nGa light)|×m2+nGa1B−(nAl1A+nGa1A)|×m1B;
nAl1B+nGa1B>nAl1A+nGa1A and nAl1B+nGa1B>nAl1C+nGa1C, or nAl1B+nGa1B<nAl1A+nGa1A and nAl1B+nGa1B<nAl1C+nGa1C;
nAl2+nGa2>nAl light+nGa light+5;
0<nGa2/(nAl2+nGa2)≤1;
0<nGa light/(nAl light+nGa light)≤1;
0<nGa1A/(nAl1A+nGa1A)≤1;
0<nGa1B/(nAl1B+nGa1B)≤1;
and
0<nGa1C/(nAl1C+nGa1C)≤1.

18 more elements

Dependencies are inferred from the claim text.

Facts

Application: 16/242,190Filed 8 Jan 2019
Priority: JP 2018-00677918 Jan 2018
Published: 23 Jan 2020
Term ends: Not estimatedThe source records don’t support an estimate.

Classification5 codes

H10F 30/222
The devices having only one potential barrier, e.g. photodiodes: the potential barrier being a PN heterojunction
H10F 30/223
The devices having only one potential barrier, e.g. photodiodes: the potential barrier being a PIN barrier
H10F 77/1248
Comprising only Group III-V materials, e.g. GaAs: having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP
H10F 77/146
Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies: superlattices;…