Solar battery

A solar battery comprising:

• a photovoltaic power generating layer including a semiconductor junction;
• and
• a UV degradation preventing layer provided directly on the photovoltaic power generating layer, wherein
• the UV deterioration preventing layer has a layer thickness (d1+d2) within a range of 2 to 60 nm, and contains semiconductor impurities including semiconductor impurities contributing to the semiconductor polarity of the UV deterioration preventing layer distributed in concentration in a layer thickness direction and having a maximum value (CDMax) of the concentration distribution in an interior thereof,
• the maximum value (CDMax) is within the following range:
• 1×1019/cm3≤Maximum value (CDMax)≤4×1020/cm3 Formula (1)
• and has a half value (b1) at a depth position (A1) from a surface of the UV deterioration preventing layer on a light incident side, and
• the depth position (A1) is within the following range:
• Depth position (A0) of Maximum value (CDMax)<(“Depth position (A1)”)≤20 nm Formula (3)

A photoelectric converter comprising:

• an n-type or p-type silicon (Si) semiconductor substrate;
• a semiconductor layer having a polarity (II) opposite to a polarity (I) of the semiconductor substrate and forming a semiconductor junction with the semiconductor substrate;
• and
• a UV deterioration preventing layer provided directly on the semiconductor layer, having a polarity (III) opposite to the polarity (II), having a layer thickness (d1+d2) within a range of 2 to 60 nm, and containing semiconductor impurities of the polarity (III) including semiconductor impurities contributing to the polarity (III) distributed in concentration in a layer thickness direction and having a maximum value (CMMax) of the concentration distribution in an interior thereof, wherein
• the maximum value (CDMax) is within the following range:
• 1×1019/cm3≤Maximum value (CDMax)≤4×1020/cm3 Formula (1)
• and has a half value (b1) at a depth position (A1) from a surface of the UV deterioration preventing layer on a light incident side, and
• the depth position (A1) is within the following range:
• Depth position (A0) of Maximum value (CDMax)<(“Depth position (A1)”)≤20 nm Formula (3)

A photoelectric converter comprising:

• a photoelectron generating layer including a semiconductor junction;
• and
• a UV degradation preventing layer provided directly on the photoelectron generating layer, wherein
• the UV deterioration preventing layer has a layer thickness (d1+d2) within a range of 2 to 60 nm, and contains semiconductor impurities including semiconductor impurities contributing to the semiconductor polarity of the UV deterioration preventing layer distributed in concentration in a layer thickness direction and having a maximum value (CDMax) of the concentration distribution in an interior thereof,
• the maximum value (DDMax) is within the following range:
• 1×1019/cm3≤Maximum value (CDMax)≤4×1020/cm3 Formula (1)
• and has a half value (b1) at a depth position (A1) from a surface of the UV deterioration preventing layer on a light incident side, and
• the depth position (A1) is within the following range:
• Depth position (A0) of Maximum value (CDMax)<(“Depth position (A1)”)≤20 nm Formula (3).